silicon crystallization unit - ald vacuum technologies

Preparation and Characterization of Thin Films of MgO, and

requirement of ALD. Systems were operated from high vacuum to atmospheric pressure. 23 A1203 thin films have been studied extensively using A1C13 as a precursor. 25,26 In this paper, an apparatus used for the deposition of MgO, A1203

Vacuum Arc Remelting (VAR

Vacuum Arc Remelting (VAR) ALD is one of the leading suppliers of vacuum melting furnace technologies for engineered metals VAR is widely used to improve the cleanliness and refine the structure of standard airmelted or vacuum induction melted ingots (called consumable electrodes).

Characterization of pulsed laser crystallization of silicon

2001/2/1Silicon islands with a width of 50 μm were defined. Al gap electrodes with a length of 250 μm were formed on silicon stripes. The samples were placed in a vacuum chamber, which was then evacuated by a turbo molecular pump to 1.510 − 4 Pa.

Silicon Crystallization Unit

Silicon Crystallization Unit Benchmark for Multi- and Monocrystalline Silicon Ingot Production ALD Vacuum Technology is the technology leader for silicon ingot production for solar applications. ALD's Silicon Crystallization Unit (SCU) furnaces are applied for melting and crystallizing solar grade silicon into square multi- and monocrystalline ingots – the key step in the

Study of the Effect of Heating Conditions During

Comparative studies are provided for the effect of heating conditions for directional crystallization in two types of unit: with liquid-metal cooling (unit UVNK-9A), i.e., LMC process, and with radiation cooling (unit of the firm ALD), i.e., high rate solidification (HRC) process, on VKNA-4UMono alloy cast structure parameters. Comparative analysis is provide for microstructure and strength

Characterization of pulsed laser crystallization of silicon

2001/2/1Silicon islands with a width of 50 μm were defined. Al gap electrodes with a length of 250 μm were formed on silicon stripes. The samples were placed in a vacuum chamber, which was then evacuated by a turbo molecular pump to 1.510 − 4 Pa.

Vacuum Metallurgy

Vacuum Metallurgy This involves designing and supplying systems and processes for treating metallic materials in liquid form – particularly vacuum systems for the melting, remelting, casting and atomization of metals and alloys, metals for solar cells as well as special coating equipment for turbine blades.

AMG Advanced Metallurgical Group N.V. Unit, ALD

ALD, is a leading global supplier of vacuum furnaces and vacuum processes and holds a patent for the recycling of radioactive metallic waste treatment. NUKEM Technologies of Alzenau, Germany, is globally active in the areas of management of radioactive waste and spent fuel, decommissioning of nuclear facilities, engineering and consulting.

Atomic layer deposition

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition.The majority of ALD reactions use two chemicals called precursors (also called reactants). (also called reactants).

Presented at the 37th European PV Solar Energy Conference and

2 ALD Vacuum Technologies , Wilhelm-Rohn-Str. 35, 63450 Hanau, Germany Phone: +49 761 - 4588 5651; e-mail: matthias.demantise.fraunhofer.de ABSTRACT: Blocking parasitic grain ingrowth in the ingot parts of cast-mono Si material close to

Preparation and Characterization of Thin Films of MgO, and

requirement of ALD. Systems were operated from high vacuum to atmospheric pressure. 23 A1203 thin films have been studied extensively using A1C13 as a precursor. 25,26 In this paper, an apparatus used for the deposition of MgO, A1203

Plasma Arc Melting

Plasma Arc Melting (PAM) ALD is a leading supplier of Plasma Arc Melting Furnace Technologies since the 1980s For melting and remelting of Titanium-Alloys, e.g. Titanium Aluminides, containing larger amounts of alloying elements with high vapor pressure that would evaporate under deep vacuum, the plasma arc melting process is the first choice.

Crystalline silicon

Crystalline silicon (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are

ALD Vacuum Technologies North America, Inc. Inc. East

ALD Vacuum Technologies AG. A young company with rich tradition. A mid-sized player with global reach. Soon to be a listed security with growth potential. ALD is the leading global supplier of processes and services in the field of vacuum process technology

AMG Advanced Metallurgical Group N.V. Unit, ALD

ALD, is a leading global supplier of vacuum furnaces and vacuum processes and holds a patent for the recycling of radioactive metallic waste treatment. NUKEM Technologies of Alzenau, Germany, is globally active in the areas of management of radioactive waste and spent fuel, decommissioning of nuclear facilities, engineering and consulting.

Recent Developments in the Crystallization Process:

2017/6/1Crystallization is one of the oldest separation and purification unit operations, and has recently contributed to significant improvements in producing higher-value products with specific properties and in building efficient manufacturing processes. In this paper, we

Growth of epitaxial oxides on silicon using atomic layer

TY - JOUR T1 - Growth of epitaxial oxides on silicon using atomic layer deposition T2 - Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001) AU - McDaniel, Martin D. AU - Posadas, Agham AU - Ngo, Thong Q. AU - Dhamdhere, Ajit AU - Smith

Vacuum Arc Remelting (VAR

Vacuum Arc Remelting (VAR) ALD is one of the leading suppliers of vacuum melting furnace technologies for engineered metals VAR is widely used to improve the cleanliness and refine the structure of standard airmelted or vacuum induction melted ingots (called consumable electrodes).

Recent Developments in the Crystallization Process:

2017/6/1Crystallization is one of the oldest separation and purification unit operations, and has recently contributed to significant improvements in producing higher-value products with specific properties and in building efficient manufacturing processes. In this paper, we

Growth of epitaxial oxides on silicon using atomic layer

TY - JOUR T1 - Growth of epitaxial oxides on silicon using atomic layer deposition T2 - Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001) AU - McDaniel, Martin D. AU - Posadas, Agham AU - Ngo, Thong Q. AU - Dhamdhere, Ajit AU - Smith

AMG acquires solar silicon casting technology from BP

Home Investors Press Releases – (Pre July 2016) AMG acquires solar silicon casting technology from BP Solar International Inc. Amsterdam, 21 December 2010 — AMG Advanced Metallurgical Group N.V. ("AMG," EURONEXT AMSTERDAM: "AMG") and BP Solar International Inc. ("BP Solar") announced that AMG has acquired intellectual property and manufacturing assets related to the

Characterization of pulsed laser crystallization of silicon

2001/2/1Silicon islands with a width of 50 μm were defined. Al gap electrodes with a length of 250 μm were formed on silicon stripes. The samples were placed in a vacuum chamber, which was then evacuated by a turbo molecular pump to 1.510 − 4 Pa.

Atomic layer deposition

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition.The majority of ALD reactions use two chemicals called precursors (also called reactants). (also called reactants).

Recent Developments in the Crystallization Process:

2017/6/1Crystallization is one of the oldest separation and purification unit operations, and has recently contributed to significant improvements in producing higher-value products with specific properties and in building efficient manufacturing processes. In this paper, we

Crystalline silicon

Crystalline silicon (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are

Growth of epitaxial oxides on silicon using atomic layer

Epitaxial anatase titanium dioxide (TiO 2) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer without any amorphous SiO x layer at the STO–Si interface. Four unit cells of STO grown by molecular beam epitaxy (MBE) serve as the surface template for ALD growth.

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